• Войти / регистр
  • Language
    • English
    • Deutsch
    • Française
    • Español
    • Português
    • Italia
    • Русский
    • 日本語
    • 한국어
    • 简体中文
    • 繁體中文

Samsung Semiconductor, Inc.

Samsung Semiconductor, Inc.
In 1974, Samsung's Semiconductor Business was founded in Korea. In 1983, the successful development of the 64Kb DRAM made Samsung's evolution become the leading semiconductor manufacturer. Then in 1984, the Giheung Semiconductor Complex and Samsung’s first memory fabrication facility opened. Samsung has held market leadership positions in Memory since 1993 and in NAND Flash since 2003 through a strategy of aggressive growth. The leading products and technology of Samsung: DRAM with 40nm Process Technology, OneDRAM?, a Fusion Memory Solution, NAND Flash, "Intelligent" DDI (Display Driver IC), 1GB S-SIM Card, Solid State Drive and External Hard Drive. A new "Fusion Era" of multi-functional, hybrid components is expected to profoundly affect the semiconductor industry. With multiple functions on one chip, Fusion technology offered multi-faceted solutions for the semiconductor industry signifies. The continual development of smaller and higher-density components Samsung has been leading the industry in fusion technology with the development its OneNAND?, Flex-OneNAND? and OneDRAM? fusion memory solutions. In 2001, the company signaled a long commitment to logic and analog chip development with the expansion of its System LSI Division and the opening of its SoC Research Lab. In 2004, Samsung's Hard Disk Drive Division was combined with its Semiconductor Business. Samsung predicts that semiconductor technology will spread to a significantly greater degree than previously thought possible: in biotechnology, healthcare, robotics, aviation, solar energy and in many more areas related to research and development of eco-friendly technologies.


Список продуктов

  • K9GAG08U0D-PCB0-
    K9GAG08U0D-PCB0-
    SAMSUNG
    TSOP
  • K9G8G08UOB-PCBO-
    K9G8G08UOB-PCBO-
    SAMSUNG
    TSOP
  • K9G8G08UOB-P1BO
    K9G8G08UOB-P1BO
    SAMSUNG
    TSOP48
  • K9G8G08UOA-PIBO-
    K9G8G08UOA-PIBO-
    SAMSUNG
    TSOP
  • K9G8G08UOA-PCBO-
    K9G8G08UOA-PCBO-
    SAMSUNG
    TSOP
  • K9G8G08UOA-P1BO
    K9G8G08UOA-P1BO
    SAMSUNG
    TSOP48
  • CIH03Q2N7CNC
    CIH03Q2N7CNC
    Samsung
    FIXED IND 2.7NH 310MA 220 MOHM
    SMD
  • CIH03Q1N8SNC
    CIH03Q1N8SNC
    SAMSUNG
    1.8nH Unshielded Multilayer Inductor 370mA 160 mOhm Max 0201 (0603 Metric)
    SMD
  • CIG22ER50SNE
    CIG22ER50SNE
    SAMSUNG
    500nH Shielded Multilayer Inductor 1008 (2520 Metric)
    SMD
  • 0.1R 1% 1/4W RU1608FR100CS
    0.1R 1% 1/4W RU1608FR100CS
    SAMSUNG
    R1608

Выберите ваше местоположение